DocumentCode :
1964425
Title :
Wafer bumping technology for LDI application by electroless nickel plating
Author :
Kim, I. -D ; Kim, Y.-N. ; Lee, J.-W. ; Park, J.-H. ; Kim, H.-G. ; Kim, I. -O
Author_Institution :
Precision Instrum. R&D Center, Samsung Techwin Co. Ltd., Kyoungki-do, South Korea
fYear :
2003
fDate :
16-18 July 2003
Firstpage :
319
Lastpage :
322
Abstract :
Electroless nickel layer has been used to provide an under bump metallization on the aluminum bond pads, as part of low cost wafer bumping process, prior to solder deposition. Recently, it has also found increasing use in wafer bumping for LDI(LCD for Drive IC) type device. However, the application of electroless nickel to the LDI wafer bumping is limited by the fact that bath stability of nickel is closely related with passivation opening size. In the present work, the effects of nickel bath parameters of stabilizer concentration, temperature and pH on the formation of electroless nickel bump have been investigated and optimum process conditions for LDI bumping were suggested. The measurements of bump surface and height distribution have been performed for the bump quality estimation by optical microscope and thickness profiler.
Keywords :
aluminium; electroless deposition; integrated circuit metallisation; nickel; optical microscopy; passivation; solders; wafer bonding; Al; Ni; aluminum bond pads; electroless nickel bump; electroless nickel plating; nickel bath stability; optical microscope; passivation; under bump metallization; wafer bumping technology; Aluminum; Costs; Metallization; Nickel; Optical microscopy; Passivation; Stability; Temperature; Thickness measurement; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. IEEE/CPMT/SEMI 28th International
ISSN :
1089-8190
Print_ISBN :
0-7803-7933-0
Type :
conf
DOI :
10.1109/IEMT.2003.1225920
Filename :
1225920
Link To Document :
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