Title :
A sub-100µW 2GHz differential colpitts CMOS/FBAR VCO
Author :
Shi, Jianlei ; Otis, Brian P.
Author_Institution :
Univ. of Washington, Seattle, WA, USA
Abstract :
We present a thin film bulk acoustic wave resonator (FBAR)-based Colpitts VCO with a cross-coupled gain boosting transistor pair. The combination of the cross-coupled pair and capacitive feedback in the Colpitts oscillator increases the effective gm to reduce the start-up current requirement, increases the output swing at a low supply voltage, and reduces the phase noise. The differential Colpitts VCO was fabricated in a 0.13 μm CMOS process and oscillates at 2 GHz under a wide range of supply voltage (0.51 V-1.5 V). The minimum power consumption is 67 μW with -141 dBc/Hz phase noise at a 1 MHz offset and a -220 dB Figure-of-Merit. At nominal 0.6 V supply voltage, the VCO consumes 126 μW, achieves -149 dBc/Hz phase noise at 1 MHz offset and shows a FOM of -224 dB.
Keywords :
CMOS analogue integrated circuits; acoustic resonators; bulk acoustic wave devices; thin film devices; voltage-controlled oscillators; capacitive feedback; cross-coupled pair; differential Colpitts CMOS-FBAR VCO; figure-of-merit; frequency 2 GHz; oscillator; phase noise; power 100 muW; power 67 muW; power consumption; size 0.13 mum; start-up current requirement; thin film bulk acoustic wave resonator; voltage 0.51 V to 1.5 V; voltage 0.6 V; Film bulk acoustic resonators; Logic gates; Phase noise; Transistors; Voltage-controlled oscillators;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2011 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4577-0222-8
DOI :
10.1109/CICC.2011.6055309