Title :
A 16nm FinFet 19/39MHz 78/72dB DR noise-injected aggregated CTSDM ADC for configurable LTE advanced CCA/NCCA Application
Author :
Tsung-Kai Kao ; Ping Chen ; Jui-Yuan Tsai ; Pao-Cheng Chiu
Author_Institution :
MediaTek Inc., Hsinchu, Taiwan
Abstract :
A 39MHz bandwidth (BW) CTSDM ADC realized by aggregating two 19MHz BW CTSDM ADCs with a noise-injected technique is presented. The in-band noise is improved by 4.77dB by this technique. The ADC samples at 832MS/s, achieves 72dB DR in 39MHz BW and 78dB DR in 19MHz BW. This aggregated ADC is implemented in 16-nm FinFet technology with 0.23 mm2 active area and 6.2 mW per ADC, and thereby achieves FoMDR of 167.1dB in 39MHz BW, and FoMDR of 173.4dB in 19MHz BW.
Keywords :
Long Term Evolution; MOSFET; analogue-digital conversion; CCA/NCCA application; CTSDM ADC; DR noise-injected; FinFet technology; FoMDR; LTE advanced; bandwidth 19 MHz; bandwidth 39 MHz; in-band noise; noise-injected technique; noncontiguous carrier aggregation; power 6.2 mW; size 0.23 mm; size 16 nm; Bandwidth; CMOS integrated circuits; FinFETs; Multi-stage noise shaping; Quantization (signal); Signal to noise ratio;
Conference_Titel :
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-86348-502-0
DOI :
10.1109/VLSIC.2015.7231280
