Title :
A 76-81GHz transmitter with 10dBm output power at 125 °C for automotive radar in 65nm bulk CMOS
Author :
To, Kun-Hin ; Trivedi, Vishal P.
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
A high power and wide tuning range CMOS-only transmitter (TX), composed of a VCO and a power amplifier, operating from -40°C to 125°C for 76-81GHz automotive radar is presented, and for the first time, demonstrates the feasibility of CMOS technology for automotive radar across the full automotive operating temperature range. Using a foundry-based 65nm bulk technology, high output power of 13.5dBm at 27°C and 10dBm at 125°C is demonstrated with a 1V supply. Output power variation across the operating temperature is about 4dB. It is achieved by merging two sets of transmission-line-based power matching network together for power combining at a single-ended output. A cross-coupled VCO together with a frequency doubler is used to provide more than 10GHz tuning range to cover process-voltage-temperature (PVT) variations. The 77GHz phase noise at the output is -87dBc/Hz at 1MHz offset. The overall power consumption is 420mW.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; frequency multipliers; millimetre wave oscillators; millimetre wave radar; radio transmitters; road vehicle radar; voltage-controlled oscillators; CMOS-only transmitter; PVT variations; automotive radar; bulk CMOS technology; cross-coupled VCO; frequency 76 GHz to 81 GHz; frequency doubler; phase noise; power 420 mW; power amplifier; power combining; process-voltage-temperature variations; radio transmitter; size 65 nm; temperature -40 degC to 125 degC; transmission-line-based power matching network; voltage 1 V; Automotive engineering; CMOS integrated circuits; Power amplifiers; Power generation; Radar; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2011 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4577-0222-8
DOI :
10.1109/CICC.2011.6055320
