Title :
Barrier and well width study of InGaN/GaN multiple quantum wells
Author :
Abare, A.C. ; Keller, S. ; Mack, M.P. ; Coldren, L.A. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; InGaN-GaN; InGaN/GaN multiple quantum well; barrier width; laser diode; well width; Calibration; Degradation; Diode lasers; Gallium nitride; Photoluminescence; Quantum computing; Quantum well devices; Superlattices; Temperature; X-ray diffraction;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619246
