A 0.5V 1KS/s 2.5nW 8.52-ENOB 6.8fJ/conversion-step SAR ADC for biomedical applications

Author

Lu, Tsung-Che ; Van, Lan-Da ; Lin, Chi-Sheng ; Huang, Chun-Ming

Author_Institution

Dept. of Comput. Sci., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

19-21 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A low-FOM SAR ADC using the leakage reduction bootstrapped switch (LRBS) to achieve a satisfactory ENOB and using a low-power approach with a low voltage, low sampling rate, and low-DAC-capacitance structure is presented for biomedical applications. LRBS is proposed to alleviate the leakage caused by the low-power approach to increase SNDR and ENOB. From the measurement results, the 0.18μm CMOS prototype chip with the total DAC capacitance of 2.765pF consumes 2.5nW and achieves a SNDR of 53.05dB under a 0.5V supply voltage at 1KS/s with a Nyquist input. The resulting FOM is 6.8fJ/conversion-step.

Keywords

CMOS digital integrated circuits; analogue-digital conversion; biomedical electronics; low-power electronics; CMOS prototype chip; Nyquist input; biomedical applications; conversion-step SAR ADC; leakage reduction bootstrapped switch; low sampling rate; low-DAC-capacitance structure; low-FOM SAR ADC; low-power approach; power 2.5 nW; size 0.18 mum; voltage 0.5 V; Capacitance; Capacitors; Clocks; Power demand; Semiconductor device measurement; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2011 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4577-0222-8

Type

conf

DOI

10.1109/CICC.2011.6055325

Filename

6055325