Title :
A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology
Author :
Campbell, Charles F. ; Tran, Kim ; Kao, Ming-Yih ; Nayak, Sabyasachi
Author_Institution :
Defense Products & Foundry Services, TriQuint Semicond., Richardson, TX, USA
Abstract :
The design and performance of a K-Band Doherty amplifier MMIC is presented. The monolithic 2-stage amplifier was fabricated with a dual field plate 0.15um GaN on SiC HEMT process technology. Measured continuous wave results at 23GHz demonstrate over 5W of saturated output power and up to 48% power added efficiency. Peak efficiency occurs at approximately 1dB of gain compression and the amplifier maintains 25% power added efficiency at 8dB of input power back off from P1dB.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; GaN; HEMT process technology; K-band Doherty amplifier MMIC design; SiC; dual field plate; frequency 18 GHz to 27 GHz; gain compression; gallium nitride; monolithic 2-stage amplifier; peak efficiency; power 5 W; power added efficiency; size 0.15 mum; Gain; Gallium nitride; K-band; MMICs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340057
