A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology

Author

Campbell, Charles F. ; Tran, Kim ; Kao, Ming-Yih ; Nayak, Sabyasachi

Author_Institution

Defense Products & Foundry Services, TriQuint Semicond., Richardson, TX, USA

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

The design and performance of a K-Band Doherty amplifier MMIC is presented. The monolithic 2-stage amplifier was fabricated with a dual field plate 0.15um GaN on SiC HEMT process technology. Measured continuous wave results at 23GHz demonstrate over 5W of saturated output power and up to 48% power added efficiency. Peak efficiency occurs at approximately 1dB of gain compression and the amplifier maintains 25% power added efficiency at 8dB of input power back off from P1dB.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; GaN; HEMT process technology; K-band Doherty amplifier MMIC design; SiC; dual field plate; frequency 18 GHz to 27 GHz; gain compression; gallium nitride; monolithic 2-stage amplifier; peak efficiency; power 5 W; power added efficiency; size 0.15 mum; Gain; Gallium nitride; K-band; MMICs; Power amplifiers; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340057

Filename

6340057