1.1-1.2 μm multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

Author

Arai, Masakazu ; Kondo, Takashi ; Nishiyama, Nobuhiko ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

2001

fDate

2001

Firstpage

600

Abstract

We demonstrated a single-mode multiple wavelength VCSEL array with highly strained GaInAs/GaAs QWs on a patterned GaAs substrate in the new wavelength band of 1.1-1.2 μm. The emission wavelength of a 16-channel array ranges from 1116 nm to 1154 nm. By using this technique, the wavelength span of the multi-wavelength GaInAs/GaAs VCSEL can be expanded and we can expect a wideband WDM-LAN using the VCSEL array

Keywords

III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical communication equipment; quantum well lasers; semiconductor growth; surface emitting lasers; 1.1 to 1.2 micron; 1116 to 1154 nm; GaInAs-GaAs; distributed Bragg reflector; highly strained QW; metal organic chemical vapor deposition; mode-gain offsets; multiple-wavelength VCSEL; oxidation confinement; patterned substrate; single-transverse mode operation; wavelength shift; wedge shaped mesa; wideband WDM-LAN; Distributed Bragg reflectors; Gallium arsenide; MOCVD; Optical arrays; Optical surface waves; Organic chemicals; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968958

Filename

968958