Short-Millimeter-Wave CMOS Design for Ultrahigh-Speed Wireless Communication

Author

Fujishima, Minoru

Author_Institution

Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application, however, a short-millimeter-wave band (more than 100 GHz) is used since it can potentially provide a wider frequency band. Thus, we have studied D-band (110 - 170 GHz) CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the short-millimeter-wave band, since only an insufficient device model is provided, research has to start from device modeling. In this paper, our studies of modeling and design for D-band CMOS circuits are described. Finally, a 10 Gbps, 135 GHz wireless transceiver with a power consumption of 98 mW is demonstrated.

Keywords

CMOS integrated circuits; field effect MIMIC; integrated circuit design; mobile radio; radio transceivers; D-band CMOS circuit design; bit rate 10 Gbit/s; device modeling; frequency 110 GHz to 170 GHz; frequency 60 GHz; low-power ultrahigh-speed wireless communication; mobile application; power 98 mW; short-distance high-speed wireless communication; short-millimeter-wave CMOS design; wireless transceiver; CMOS integrated circuits; Delay; Integrated circuit modeling; Power demand; Receivers; Semiconductor device modeling; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340062

Filename

6340062