Broadband diffraction in a photorefractive asymmetric coupled quantum well structure

Author

Iwamoto, S. ; Nishioka, M. ; Someya, T. ; Arakawa, Y. ; Shimura, T. ; Kuroda, K.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

Volume

2

fYear

2001

fDate

2001

Firstpage

614

Abstract

We report a new approach to expand the diffraction bandwidth of a photorefractive device in the longitudinal-field geometry by using asymmetric coupled quantum well (ACQW) structures. The longitudinal-field geometry is another configuration of PR MQW devices. Compared with devices in the transverse-field geometry, larger diffraction efficiency is obtained with a smaller operating voltage (10-20V) in the longitudinal-field geometry. The device has a photorefractive p-i-n structure

Keywords

III-V semiconductors; diffraction gratings; electro-optical modulation; electroabsorption; gallium arsenide; infrared spectra; multiwave mixing; p-i-n photodiodes; photorefractive materials; semiconductor quantum wells; AlGaAs; GaAs; PR MQW devices; asymmetric coupled quantum well structures; broadband diffraction; diffraction bandwidth; diffraction efficiency; longitudinal-field geometry; operating voltage; photorefractive asymmetric coupled quantum well structure; photorefractive device; Bandwidth; Diffraction; Gallium arsenide; Geometry; Gratings; Optical devices; Optical modulation; Photorefractive effect; Ultrafast optics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968965

Filename

968965