Title :
A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology
Author :
Zomorrodian, Valiallah ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT technology; drain bias; efficiency 60 percent; efficiency 69 percent; frequency 4.0 GHz; gain 11.4 dB; high-efficiency class F MMIC power amplifier; power density; voltage 20 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; Power amplifiers; Topology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340065
