A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

Author

Zomorrodian, Valiallah ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At V_DS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT technology; drain bias; efficiency 60 percent; efficiency 69 percent; frequency 4.0 GHz; gain 11.4 dB; high-efficiency class F MMIC power amplifier; power density; voltage 20 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; Power amplifiers; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340065

Filename

6340065