Hot Electrons Microwave Power Monitors for X and S-Bands

Design and performance of very high pulse power monitors based on the thermoelectric effects of hot carriers in a semiconductor placed in the microwave electric field gradient is described. Principle of operation of the devices is presented with the special attention paid to semiconductor material choice and some particular design problems. The results of measurements of S and X-band power monitors are given up to 1 MW and 100 KW respectively. Thermoelectric voltage of hot carriers is not sensitive to ambient temperature changes from - 40 to + 60°C. No aging effects during 6 month period were detected.