Title :
Linearization of a Spatially-Combined X-Band 100-W GaAs FET Power Amplifier System with Predistortion Linearizer
Author :
Chung, Younkyu ; Deckman, Blythe C. ; DeLisio, Michael P.
Author_Institution :
Wavestream Corp., San Dimas, CA, USA
Abstract :
This paper presents the design and performance of an X-band GaAs FET power amplifier (PA) system with 100-W of saturated output power. A simple and cost-effective predistortion linearizer is developed to increase the linear output power of the PA system. To spatially combine output powers of GaAs FETs and to launch output signals directly into the WR-112 waveguide, the PA uses a pair of microstrip-to-coaxial transition probes. Measurement shows that linearization significantly reduces the PA´s nonlinear signal distortions, resulting in a 3 dB increase of operating linear output power.
Keywords :
III-V semiconductors; MMIC power amplifiers; coaxial waveguides; field effect transistor circuits; gallium arsenide; linearisation techniques; microstrip transitions; nonlinear distortion; GaAs; PA system; WR-112 waveguide; frequency 8 GHz to 12 GHz; linear output power; linearization; microstrip-to-coaxial transition probes; nonlinear signal distortions; power 100 W; predistortion linearizer; saturated output power; spatially-combined X-band GaAs FET power amplifier system; Gain; Microwave amplifiers; Nonlinear distortion; Power generation; Predistortion; Waveguide transitions;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340066
