DocumentCode :
1965250
Title :
Low Frequency Test for RF MEMS Switches
Author :
Rehder, Gustavo P. ; Mir, Salvador ; Rufer, Libor ; Simeu, Emmanuel ; Nguyen, Hoang N.
Author_Institution :
TIMA Lab., UJF, Grenoble, France
fYear :
2010
fDate :
13-15 Jan. 2010
Firstpage :
350
Lastpage :
354
Abstract :
In order to envision fault-tolerant SiPs and SoCs containing RF MEMS switches, this paper studies easily embedded low frequency tests for capacitive switches. The correlation between high frequency (S parameters) and low frequency (envelope of the high frequency signal) responses of a capacitive RF MEMS switch is analysed. This has been done by modeling both the electromechanical and RF behaviours of the switch and by a statistical simulation of the switch with Monte Carlo method. Next, it has been possible to predict the insertion loss, return loss and isolation of the switch from the low frequency measurements for a broad frequency range. Furthermore, by using the obtained correlations for two different frequencies, it was possible to recreate the S-parameters for the entire frequency spectrum with good agreement.
Keywords :
Monte Carlo methods; S-parameters; fault tolerance; microswitches; system-in-package; system-on-chip; Monte Carlo method; RF MEMS switches; S parameters; SiP; SoC; capacitive switches; fault tolerance; low frequency test; statistical simulation; system-in-package; Fault tolerance; Frequency measurement; Insertion loss; RF signals; Radio frequency; Radiofrequency microelectromechanical systems; Scattering parameters; Signal analysis; Switches; Testing; RF MEMS; S-Parameters; low frequency test; switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
Conference_Location :
Ho Chi Minh City
Print_ISBN :
978-0-7695-3978-2
Electronic_ISBN :
978-1-4244-6026-7
Type :
conf
DOI :
10.1109/DELTA.2010.16
Filename :
5438666
Link To Document :
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