DocumentCode
1965278
Title
X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD
Author
Chang, W. ; Lin, J. ; Zhou, W. ; Chua, S.J. ; Liu, Y.J. ; Wee, A.T.S.
Author_Institution
Dept. of Phys., Nat. Univ. of Singapore, Singapore
Volume
2
fYear
2001
fDate
2001
Firstpage
624
Abstract
InGaAsN films grown by MOCVD were examined by X-ray photoelectron spectroscopy (XPS). The success of N atoms incorporation was demonstrated. The existence of two N configurations is observed. In addition, the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga. All these results imply the formation of InN+GaAs configuration in InGaAsN quaternary alloy
Keywords
III-V semiconductors; MOCVD; X-ray photoelectron spectra; gallium arsenide; gallium compounds; indium compounds; optical films; Ga:As; In:Ga; InGaAsN; InGaAsN films; InGaAsN quaternary alloy; InN+GaAs configuration; MOCVD; N atom incorporation; X-ray photoelectron spectroscopy; XPS; atomic ratio; Annealing; Conducting materials; Energy resolution; Gallium nitride; MOCVD; Nitrogen; Spectroscopy; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location
San Diego, CA
ISSN
1092-8081
Print_ISBN
0-7803-7105-4
Type
conf
DOI
10.1109/LEOS.2001.968970
Filename
968970
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