Title :
X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD
Author :
Chang, W. ; Lin, J. ; Zhou, W. ; Chua, S.J. ; Liu, Y.J. ; Wee, A.T.S.
Author_Institution :
Dept. of Phys., Nat. Univ. of Singapore, Singapore
Abstract :
InGaAsN films grown by MOCVD were examined by X-ray photoelectron spectroscopy (XPS). The success of N atoms incorporation was demonstrated. The existence of two N configurations is observed. In addition, the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga. All these results imply the formation of InN+GaAs configuration in InGaAsN quaternary alloy
Keywords :
III-V semiconductors; MOCVD; X-ray photoelectron spectra; gallium arsenide; gallium compounds; indium compounds; optical films; Ga:As; In:Ga; InGaAsN; InGaAsN films; InGaAsN quaternary alloy; InN+GaAs configuration; MOCVD; N atom incorporation; X-ray photoelectron spectroscopy; XPS; atomic ratio; Annealing; Conducting materials; Energy resolution; Gallium nitride; MOCVD; Nitrogen; Spectroscopy; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968970
