Title :
Very High Q, NEMS Inductor for 12GHz Wireless Sensor Applications
Author :
Khalid, N. ; Singh, J. ; Le, H.P. ; Shah, K. ; Devlin, J. ; Sauli, Z.
Author_Institution :
La Trobe Univ., Bundoora, VIC, Australia
Abstract :
This paper presents the design and optimisation of high quality (Q) factor inductors using Micro/Nano Electro-Mechanical Systems (NEMS/MEMS) technology for 10 GHz to 20 GHz frequency band. Three inductors have been designed with rectangular, circular and symmetric topologies. Comparison has been made amongst the three to determine the best Q-factor. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various parameters such as outer diameter (OD), the width of metal traces (W), the thickness of the metal (T) and the air gap (AG) on the Q-factor and inductance performances are thoroughly investigated. Results indicate that the symmetric inductor has highest Q-factor with peak Q of 192 at 12 GHz for a 1.13 nH.
Keywords :
Q-factor; inductors; micromechanical devices; microwave devices; nanoelectromechanical devices; optimisation; sapphire; silicon; wireless sensor networks; NEMS inductor; NEMS/MEMS technology; circular topology; frequency 10 GHz to 20 GHz; microelectromechanical systems; nanoelectromechanical systems; optimisation; rectangular topology; silicon-on-sapphire; symmetric topology; very high quality factor; wireless sensor applications; Conductivity; Design optimization; Frequency; Inductors; Micromechanical devices; Nanoelectromechanical systems; Parasitic capacitance; Q factor; Topology; Wireless sensor networks; High Q inductor; Micro/Nano Electro-Mechanical Systems (MEMS/NEMS); Silicon-on-sapphire;
Conference_Titel :
Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
Conference_Location :
Ho Chi Minh City
Print_ISBN :
978-0-7695-3978-2
Electronic_ISBN :
978-1-4244-6026-7
DOI :
10.1109/DELTA.2010.45
