Title :
A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications
Author :
Charbonniaud, C. ; Xiong, A. ; Dellier, S. ; Gasseling, T.
Author_Institution :
AMCAD Eng., Limoges, France
Abstract :
This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics (positive and negative drain voltage excursion). Compared to classical models dedicated to amplifier designs, this model is able to describe third quadrant (when driving the transistor with negative drain voltages) and zero drain voltage bias phenomena.
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; gallium compounds; high electron mobility transistors; semiconductor device models; switches; wide band gap semiconductors; HEMT devices; amplifier design; classical model; current source; junction capacitances; model validity; nonlinear electrothermal model; positive-negative drain voltage excursion; switch applications; switch mode; zero drain voltage bias phenomena; Capacitance; Gallium nitride; HEMTs; Integrated circuit modeling; Pulse measurements; Temperature measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340073
