Title :
A Phenomenological Model for A. M. and F. M. Noise of Gunn Type Microwave Oscillators
Author :
Rao, B.V. ; Shetty, N.R.
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology, Bombay, Powai, Bombay 400 076, India.
Abstract :
Monte Carlo techniques have been applied for the first time in the calculation of hot noise in multivalleyed GaAs taking various possible scattering mechanisms into account. A. M. noise (DSB)to carrier ratio and r.m.s. frequency deviation as well as F. M. noise (DSB) to carrier ratio are hence computed over the sideband range 1-100 MHz of a cavity controlled Gunn type oscillation for Quenched and Delayed Domain modes by adopting a phenomenological model proposed by Middleton. The results exhibit trends in fair agreement with available experimental work.
Keywords :
1f noise; Acoustic noise; Amplitude modulation; Background noise; Electrons; Frequency; Gallium arsenide; Gunn devices; Microwave oscillators; Monte Carlo methods;
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
DOI :
10.1109/EUMA.1975.332174
