• DocumentCode
    1965380
  • Title

    A Phenomenological Model for A. M. and F. M. Noise of Gunn Type Microwave Oscillators

  • Author

    Rao, B.V. ; Shetty, N.R.

  • Author_Institution
    Department of Electrical Engineering, Indian Institute of Technology, Bombay, Powai, Bombay 400 076, India.
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    Monte Carlo techniques have been applied for the first time in the calculation of hot noise in multivalleyed GaAs taking various possible scattering mechanisms into account. A. M. noise (DSB)to carrier ratio and r.m.s. frequency deviation as well as F. M. noise (DSB) to carrier ratio are hence computed over the sideband range 1-100 MHz of a cavity controlled Gunn type oscillation for Quenched and Delayed Domain modes by adopting a phenomenological model proposed by Middleton. The results exhibit trends in fair agreement with available experimental work.
  • Keywords
    1f noise; Acoustic noise; Amplitude modulation; Background noise; Electrons; Frequency; Gallium arsenide; Gunn devices; Microwave oscillators; Monte Carlo methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332174
  • Filename
    4130803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965380