DocumentCode

1965466

Title

"Epitaxial" Growth of lnSb on Semi-insulating GaAs by Low Pressure MOCVD

Author

Iwamura, Yasuo ; Watanabe, Naozo

Author_Institution

Department of Electrical Engineering, Kanagawa University, Japan

fYear

1992

fDate

8-11 Jun 1992

Firstpage

41

Lastpage

42

Keywords

Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium; Inductors; Lattices; MOCVD; Substrates; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

conf

DOI

10.1109/MOVPE.1992.664926

Filename

664926