Title :
Attempt to amplify broadband THz radiation with a p-Ge active crystal
Author :
Tani, Masahiko ; Hosako, Iwao ; Herrmann, Michael ; Sakai, Kiyomi ; Watanabe, Masayoshi ; Hiromoto, Norihisa
Author_Institution :
Kansai Adv. Res. Center, Commun. Res. Lab., Kobe, Japan
Abstract :
Although amplification of terahertz (THz) radiation have been highly desired to have a more intense THz radiation source, it was never achieved so far. The reason for it is the lack of efficient and broadband THz laser gain media. In other words, if we can use an efficient, broadband THz laser, it is possible to amplify the THz pulsed radiation due to the stimulated emission induced when the THz radiation travels though the laser gain medium. At present, the p-type Ge laser seems to be the only candidate which is feasible to be used as the THz amplifier: The p-Ge laser uses the population inversion between the light holes and heavy holes in the valence band, and has a broadband gain typically over 1-4 THz range and a relatively high peak power output from mW to W level. Therefore, a p-Ge laser can be used as an amplifier for the broadband THz pulsed radiation. In this paper we report our attempt to amplify THz radiation pulses with a p-type Ge active medium
Keywords :
elemental semiconductors; germanium; population inversion; semiconductor lasers; stimulated emission; submillimetre wave lasers; 1 to 4 THz; FFT spectra; Ge; THz amplification; THz laser gain media; broadband terahertz radiation; heavy holes; light holes; off-axis parabolic mirror; overlapped E-bias; p-type active medium; population inversion; stimulated emission; valence band; Broadband amplifiers; Helium; Lasers and electrooptics; Optical amplifiers; Optical pulse generation; Optical pulses; Power lasers; Pulse amplifiers; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968979