Title :
A Novel Electrostatic Discharge (ESD) Protection Circuit in D-Mode pHEMT Technology
Author :
Cui, Qiang ; Zhang, Shuyun ; Zhao, Yibing ; Hou, Bin ; Liou, Juin J.
Author_Institution :
Radio Freq. Group (RFG), Analog Devices, Wilmington, MA, USA
Abstract :
Electrostatic discharge (ESD) protection structures in the D-Mode GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp. This paper develops an improved ESD protection clamp based on a novel multi-gate pHEMT in D-Mode technology. With similar layout area, the proposed ESD protection clamp can carry much higher current than the conventional single-gate pHEMT clamp under the human body model (HBM) stress.
Keywords :
electrostatic discharge; high electron mobility transistors; D mode pHEMT technology; ESD protection clamp; electrostatic discharge protection circuit; electrostatic discharge protection structure; human body model stress; multigate pHEMT; single Gate clamp; stacked Schottky diode; Clamps; Electrostatic discharges; Logic gates; PHEMTs; Schottky diodes;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340079
