• DocumentCode
    1965480
  • Title

    A Novel Electrostatic Discharge (ESD) Protection Circuit in D-Mode pHEMT Technology

  • Author

    Cui, Qiang ; Zhang, Shuyun ; Zhao, Yibing ; Hou, Bin ; Liou, Juin J.

  • Author_Institution
    Radio Freq. Group (RFG), Analog Devices, Wilmington, MA, USA
  • fYear
    2012
  • fDate
    14-17 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Electrostatic discharge (ESD) protection structures in the D-Mode GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp. This paper develops an improved ESD protection clamp based on a novel multi-gate pHEMT in D-Mode technology. With similar layout area, the proposed ESD protection clamp can carry much higher current than the conventional single-gate pHEMT clamp under the human body model (HBM) stress.
  • Keywords
    electrostatic discharge; high electron mobility transistors; D mode pHEMT technology; ESD protection clamp; electrostatic discharge protection circuit; electrostatic discharge protection structure; human body model stress; multigate pHEMT; single Gate clamp; stacked Schottky diode; Clamps; Electrostatic discharges; Logic gates; PHEMTs; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
  • Conference_Location
    La Jolla, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4673-0928-8
  • Type

    conf

  • DOI
    10.1109/CSICS.2012.6340079
  • Filename
    6340079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965480