DocumentCode :
1965685
Title :
Growth of GaSb and InSb by Low Pressure Plasma-MOVPE
Author :
Stoll, B. ; Brysch, W. ; Behet, M. ; Heime, K.
Author_Institution :
Institut fur Halbleitertechnik, RWTH Aachen, Deutschland
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
43
Lastpage :
44
Keywords :
Diode lasers; Gallium arsenide; Kinetic theory; Optical materials; Plasma materials processing; Plasma temperature; Semiconductor materials; Substrates; Surface morphology; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664927
Filename :
664927
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1965685
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