THz Indium Phosphide Bipolar Transistor Technology

Author

Rodwell, M.J.W. ; Rode, J. ; Chiang, H.W. ; Choudhary, P. ; Reed, T. ; Bloch, E. ; Danesgar, S. ; Park, H.-C. ; Gossard, A.C. ; Thibeault, B.J. ; Mitchell, W. ; Urteaga, M. ; Griffith, Z. ; Hacker, J. ; Seo, M. ; Brar, B.

Author_Institution

Dept. of Electr. Eng., Univ. of California, Santa Barbara, CA, USA

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm/3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.

Keywords

III-V semiconductors; bipolar transistors; electrical contacts; indium compounds; submillimetre wave transistors; InP; THz bipolar transistor technology; base contact; current-carrying capability; emitter contact; frequency 3 THz; penetration depth; refractory dry-etch emitter; resistivity; scaling laws; size 32 nm; Conductivity; Doping; Heterojunction bipolar transistors; Indium phosphide; Junctions; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340091

Filename

6340091