Title :
Optical gain in GaN based semiconductors
Author :
Domen, K. ; Horino, K. ; Kuramata, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain. We discuss the reduction in Jth on the c-plane, and we investigate the anisotropic strain effect on the (11~00) plane.
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; GaN; anisotropic strain; film; nitride laser; optical gain; threshold current density; wurtzite semiconductor; Anisotropic magnetoresistance; Capacitive sensors; Charge carrier density; Gallium nitride; Geometrical optics; Laboratories; Optical films; Quantum well devices; Tensile strain; Threshold current;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619251
