Title :
Modeling of FET Switches
Author :
Kharabi, Faramarz
Author_Institution :
RFMD, Greensboro, NC, USA
Abstract :
This paper describes the salient features of modeling FET devices for switch applications, with examples in GaAs PHEMT and GaN HEMT technologies. It explains the subtle differences that differentiate these models from PA models and what is required to accurately describe their small- and large- signal behavior. In that respect, suggestions are made on how to approach formulation of critical parameters in meeting unique requirements of modeling high-power switches with novel device structures.
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; high electron mobility transistors; wide band gap semiconductors; FET devices modeling; GaAs; GaN; PA models; PHEMT technologies; device structures; high-power switches modeling; large-signal behavior; small-signal behavior; Gallium nitride; Logic gates; Mathematical model; PHEMTs; Semiconductor device measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340092
