Title :
A High Efficiency 780 MHz GaN Envelope Tracking Power Amplifier
Author :
Yan, Jonmei J. ; Theilmann, Paul ; Kimball, Donald F.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, La Jolla, CA, USA
Abstract :
A high efficiency GaN envelope tracking power amplifier (ETPA) operated at 780 MHz, corresponding to LTE band class 14, is presented. The ETPA was tested with both a 6.6 dB PAPR WCDMA signal and a 7.5 dB PAPR 10 MHz 16 QAM LTE signal. Under the WCDMA signal, a drain efficiency of ~70% with 13.5 dB of gain and 28.6 W of output power was measured. The corresponding NRMSE, ACPR1, and ACPR2 were 1.51%, -45 dBc, and -51 dBc, respectively. For the 10 MHz LTE signal, a drain efficiency of 60% with 13.6 dB of gain and 23W of output power was measured. The corresponding EVM, ACPR1, and ACPR2 were 3%, -45 dBc, and -46 dBc, respectively. Using DPD that corrects for memory effects, results that meet the standard´s specifications were obtained. To the best of the author´s knowledge, the efficiency values presented here set a new record for power amplifier performance under high PAPR signals for both 5 MHz and 10 MHz modulation bandwidth signals.
Keywords :
III-V semiconductors; Long Term Evolution; UHF power amplifiers; code division multiple access; gallium compounds; quadrature amplitude modulation; wide band gap semiconductors; GaN; GaN envelope tracking power amplifier; LTE band class 14; PAPR 16 QAM LTE signal; PAPR WCDMA signal; bandwidth 10 MHz; bandwidth 5 MHz; efficiency 60 percent; frequency 780 MHz; gain 13.5 dB; gain 13.6 dB; memory effects; Gain; Gallium nitride; Multiaccess communication; Peak to average power ratio; Power amplifiers; Radio frequency; Spread spectrum communication;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340093