Title :
A Cooled GaAs Mesfet Amplifier Operating at 12 GHz with 1.6 dB Noise Figure
Author :
Liechti, C.A. ; Larrick, R.B. ; Mellor, D.J.
Author_Institution :
Hewlett-Packard Company, 1501 Page Mill Road, Palo Alto, CA 94304 U.S.A.
Abstract :
The performance of a three-stage GaAs MESFET amplifier operating in the 11.7 to 12.2 GHz U.S. satellite communication band is characterized between 40°K and 300°K. At room temperature, the noise figure is 5.3 dB (Te=700°K) and the gain is 18 dB. By cooling to 40°K, the noise figure decreases to 1.6 dB (Te=130°K) while the gain increases to 31 dB.
Keywords :
Circuit noise; Cooling; FETs; Frequency; Gain; Gallium arsenide; Land surface temperature; Low-noise amplifiers; MESFETs; Noise figure;
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
DOI :
10.1109/EUMA.1975.332213
