• DocumentCode
    1965829
  • Title

    A Cooled GaAs Mesfet Amplifier Operating at 12 GHz with 1.6 dB Noise Figure

  • Author

    Liechti, C.A. ; Larrick, R.B. ; Mellor, D.J.

  • Author_Institution
    Hewlett-Packard Company, 1501 Page Mill Road, Palo Alto, CA 94304 U.S.A.
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    306
  • Lastpage
    309
  • Abstract
    The performance of a three-stage GaAs MESFET amplifier operating in the 11.7 to 12.2 GHz U.S. satellite communication band is characterized between 40°K and 300°K. At room temperature, the noise figure is 5.3 dB (Te=700°K) and the gain is 18 dB. By cooling to 40°K, the noise figure decreases to 1.6 dB (Te=130°K) while the gain increases to 31 dB.
  • Keywords
    Circuit noise; Cooling; FETs; Frequency; Gain; Gallium arsenide; Land surface temperature; Low-noise amplifiers; MESFETs; Noise figure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332213
  • Filename
    4130828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965829