DocumentCode :
1965884
Title :
Growth of GaSb and GaAsSb in Single Phase Region by MOVPE
Author :
Lu, Da-Cheng ; Du Wang ; Liu, Xianglin ; Lin, Lanying
Author_Institution :
Institute of Semiconductors, Chinese Academy of Science, P.R. China
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
45
Lastpage :
46
Keywords :
Epitaxial growth; Epitaxial layers; Gallium; III-V semiconductor materials; Inductors; Solids; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664928
Filename :
664928
Link To Document :
بازگشت