DocumentCode :
1965939
Title :
A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe
Author :
Chiang, Pei-Yuan ; Momeni, Omeed ; Heydari, Payam
Author_Institution :
Nanoscale Commun. IC (NCIC) Lab., Univ. of California, Irvine, CA, USA
fYear :
2012
fDate :
14-17 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave oscillators; voltage-controlled oscillators; BiCMOS process; SiGe; base degenerated transistor; efficiency 0.6 percent; emitter node; frequency 0.2 THz; frequency 201.5 GHz; frequency 222.7 GHz to 229 GHz; highly efficient push-push voltage controlled oscillator; highly efficient varactor-less VCO; power 30 mW; record-breaking power efficiency; size 130 nm; varactor-less-based frequency-tuning topology; variable inductance; Frequency measurement; Power generation; Power measurement; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
ISSN :
1550-8781
Print_ISBN :
978-1-4673-0928-8
Type :
conf
DOI :
10.1109/CSICS.2012.6340100
Filename :
6340100
Link To Document :
بازگشت