Title :
A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology
Author :
Byeon, Chul Woo ; Song, In Sang ; Cho, Seong Jun ; Kim, Hong Yi ; Lee, Chaejun ; Park, Chul Soon
Author_Institution :
Intell. Radio Eng. Center (IREC), Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
A 60GHz variable gain amplifier is designed and fabricated in 0.18 μm SiGe BiCMOS technology. A phase compensation technique is employed for the minimization of the phase imbalance at different gain states. With a 3.3 V supply, the amplifier achieves a variable gain ranging from -2.7 dB to 17.7 dB at 60 GHz, consuming DC power of 50 mW. The measured RMS phase imbalance is less than 2.8° at 57-66 GHz of the 60 GHz full band. The output 1-dB gain compression point is >; 2 dBm for all of the gain states at 60 GHz.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave amplifiers; BiCMOS technology; RMS phase imbalance; SiGe; frequency 57 GHz to 66 GHz; gain 1 dB; gain 2.7 dB to 17.7 dB; low phase imbalance; phase compensation technique; phase imbalance minimization; power 50 mW; size 0.18 mum; variable gain amplifier; voltage 3.3 V; BiCMOS integrated circuits; Gain; Gain measurement; Inductors; Loss measurement; Phased arrays; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340101
