A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology

Author

Byeon, Chul Woo ; Song, In Sang ; Cho, Seong Jun ; Kim, Hong Yi ; Lee, Chaejun ; Park, Chul Soon

Author_Institution

Intell. Radio Eng. Center (IREC), Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A 60GHz variable gain amplifier is designed and fabricated in 0.18 μm SiGe BiCMOS technology. A phase compensation technique is employed for the minimization of the phase imbalance at different gain states. With a 3.3 V supply, the amplifier achieves a variable gain ranging from -2.7 dB to 17.7 dB at 60 GHz, consuming DC power of 50 mW. The measured RMS phase imbalance is less than 2.8° at 57-66 GHz of the 60 GHz full band. The output 1-dB gain compression point is >; 2 dBm for all of the gain states at 60 GHz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave amplifiers; BiCMOS technology; RMS phase imbalance; SiGe; frequency 57 GHz to 66 GHz; gain 1 dB; gain 2.7 dB to 17.7 dB; low phase imbalance; phase compensation technique; phase imbalance minimization; power 50 mW; size 0.18 mum; variable gain amplifier; voltage 3.3 V; BiCMOS integrated circuits; Gain; Gain measurement; Inductors; Loss measurement; Phased arrays; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340101

Filename

6340101