Title :
A CMOS image sensor for high-speed imaging
Author :
Stevanovic, N. ; Hillebrand, M. ; Hosticka, B.J. ; Teuner, A.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
Acquisition of the images of fast-moving objects requires imagers with high photoresponsivity at short integration times, synchronous exposure, and high-speed parallel readout. Previous CMOS implementations yield frame rates around 500 frames/s at integration times ranging from 75 to 200 ps, and some use rolling shutter only. This CMOS imager achieves more than 1000 frames/s with integration time in synchronous exposure variable between 1 /spl mu/s and 150 /spl mu/s. The 256/spl times/256 pixel imager is realized in a single-poly double-metal n-well 1 /spl mu/m CMOS technology.
Keywords :
CMOS image sensors; high-speed integrated circuits; integrated circuit noise; readout electronics; timing; 1 micron; 256 pixel; 65536 pixel; CMOS image sensor; fixed pattern noise; frame rates; high photoresponsivity; high-speed imaging; high-speed parallel readout; short integration times; synchronous exposure; CMOS image sensors; CMOS technology; Capacitors; Circuits; Diodes; Operational amplifiers; Pixel; Readout electronics; Timing; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839710
