Title :
A 220 GHz InP HBT Solid-State Power Amplifier MMIC with 90mW POUT at 8.2dB Compressed Gain
Author :
Reed, Thomas B. ; Rodwell, Mark ; Griffith, Zach ; Rowell, Petra ; Young, Adam ; Urteaga, Miguel ; Field, Mark
Author_Institution :
Santa Barbara Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
A 220 GHz Solid State Power Amplifer MMIC is presented simultaneously demonstrating 90mW output power Pout and 8.2dB compressed gain. This 2-Stage, 8-Cell amplifier has 14.8 dB S21 gain at 220GHz, with small signal bandwidth from at least 190 to 240GHz. PDC is 4.46W. Amplifier cells were fabricated from a 250nm InP HBT technology, jointly with a substrate- shielded, thin-film microstrip wiring environment using BCB. The 90mW Pout is achieved by combining eight amplifier cascode cells. The use of two gain stages relaxes the RF source power demands, where only 13.6mW Pin is needed to achieve 90mW Pout. Over 10GHz bandwidth, at least 75mW Pout is observed from 210 to 220GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave power amplifiers; HBT solid-state power amplifier MMIC; HBT technology; InP; RF source power demands; bandwidth 10 GHz; compressed gain; frequency 210 GHz to 220 GHz; gain 14.8 dB; gain 8.2 dB; power 4.46 W; power 90 mW; size 250 nm; small signal bandwidth; substrate- shielded thin-film microstrip wiring environment; two-stage eight-cell amplifier cascode cells; Gain; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340113
