Title :
Current Status of GaN and Related Compounds, as Wide-Gap Semiconductors
Author_Institution :
Ntt Opto-Electronics Laboratories, Japan
Keywords :
Buffer layers; Crystalline materials; Crystallization; DH-HEMTs; Gallium arsenide; Gallium nitride; Light emitting diodes; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664930
