Title :
Active layer characterization of GaInP vertical cavity surface-emitting lasers using two-photon femtosecond excitation
Author :
Ullrich, B. ; Schroeder, R.
Author_Institution :
Dept. of Phys. & Astron., Bowling Green State Univ., OH, USA
Abstract :
We show that with two-photon excitation, the entire layer structure of a VCSEL can be probed at once, entirely without damage to the sample
Keywords :
III-V semiconductors; energy gap; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; optical pumping; semiconductor lasers; stimulated emission; surface emitting lasers; time resolved spectra; two-photon spectra; 625 to 655 nm; GaInP; active layer characterization; cavity design; mini-VCSEL; optically induced bandgap shrinkage; optically pumped lasing; stimulated emission; two-photon absorption; two-photon femtosecond excitation; vertical cavity surface-emitting lasers; Astronomy; Distributed Bragg reflectors; Laser excitation; Laser theory; Optical pumping; Physics; Probes; Surface emitting lasers; Ultrafast optics; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969022
