DocumentCode :
1966405
Title :
Use of a step-response approximation for thermal transient modeling in power MOSFETs
Author :
Baylis, Charles ; Perry, Joseph ; Moldovan, Matthew ; Marks, Robert J., II ; Dunleavy, Lawrence
Author_Institution :
Dept. of Electr. & Comput. Eng., Baylor Univ., Waco, TX, USA
fYear :
2009
fDate :
Nov. 30 2009-Dec. 4 2009
Firstpage :
1
Lastpage :
4
Abstract :
In a previous ARFTG paper, we presented the measurement of the thermally-induced transient drain voltage response of a power Si MOSFET to a step excitation in gate voltage. The data was fit by assuming the drain voltage takes an exponential shape. This relies on the assumption that the drain current is a step function, which is actually only approximate due to the dependence of the drain current on temperature. In this work, we show that the exponential approximation actually possesses the same asymptotic behavior of a more accurate, model-based solution we have obtained that incorporates thermal feedback. We show that the more theoretically accurate solution and exponential approximation of the solution both provide excellent fits to measured data for the Si MOSFET.
Keywords :
elemental semiconductors; power MOSFET; silicon; Si; gate voltage; power MOSFET; step-response approximation; thermal transient modeling; thermally-induced transient drain voltage; Electrical resistance measurement; Electrothermal effects; MOSFETs; Power measurement; Power system modeling; Temperature; Thermal engineering; Thermal resistance; Time measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Symposium, 2009 74th ARFTG
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-5712-0
Type :
conf
DOI :
10.1109/ARFTG74.2009.5439098
Filename :
5439098
Link To Document :
بازگشت