DocumentCode :
1966438
Title :
MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine
Author :
Miyoshi, S. ; Onabe, K. ; Ohkouchi, N. ; Yaguchi, H. ; Fukatsu, S. ; Shiraki, Y. ; Ito, R.
Author_Institution :
Department of Applied Physics, The University of Tokyo
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
52
Lastpage :
53
Keywords :
Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Raman scattering; Spectroscopy; Substrates; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664931
Filename :
664931
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1966438
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