DocumentCode
1966462
Title
A Low-Loss Microstrip X-Band Diode Phase Shifter
Author
Craig, Charles W. ; Hom, Harvey K.
Author_Institution
ITT Gilfillan, Van Nuys, California, USA
fYear
1975
fDate
1-4 Sept. 1975
Firstpage
518
Lastpage
521
Abstract
An X-band four-bit phase shifter capable of handling 440 watts peak power with an average transmission loss less than 1.7 dB has been constructed on a single sapphire substrate, with 8 PIN diodes as the only discrete componenets. This insertion loss is the lowest which has been acknowledged at this time for a comparable diode device. The unit has an RMS phase error less than 6.4° over a 7% band.
Keywords
Bandwidth; Coupling circuits; Diodes; Etching; Insertion loss; Microstrip; Phase shifters; Propagation losses; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1975. 5th European
Conference_Location
Hamburg, Germany
Type
conf
DOI
10.1109/EUMA.1975.332124
Filename
4130862
Link To Document