High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers

Author

Nakata, T. ; Takeuchi, T. ; Makita, K. ; Torikai, T.

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan

Volume

2

fYear

2001

fDate

2001

Firstpage

770

Abstract

We have developed APDs designed for 10 Gb/s and 40 Gb/s receivers. A multimode waveguide structure and a very thin InAlAs multiplication layer enable high quantum efficiency, a high bandwidth, and low-voltage operation. Therefore, the waveguide structure is suitable for 10 Gb/s or higher bit rate APD receivers. In this paper, an InAlAs multiplication layer thickness is optimised so as to achieve low dark current and high GB product for 10-40 Gb/s high-sensitivity receivers

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; etching; indium compounds; optical planar waveguides; optical receivers; 10 to 40 Gbit/s; InAlAs; beam-propagation method; coplanar electrode; dry etching; high bandwidth; high quantum efficiency; high-sensitivity photodiodes; high-speed photodiodes; low dark current; low-voltage operation; multimode waveguide structure; optical receivers; very thin multiplication layer; waveguide avalanche photodiodes; wet chemical etching; Avalanche photodiodes; Bandwidth; Capacitance measurement; Dark current; Dry etching; Electrical resistance measurement; Indium compounds; Optical receivers; Optical waveguides; Parasitic capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969042

Filename

969042