Dark current reduction in fused InGaAs/Si avalanche photodiode

Author

Kang, Y. ; Mages, P. ; Pauchard, A. ; Clawson, A.R. ; Lau, S.S. ; Lo, Y.H. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

772

Abstract

Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 μm have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm² at -5 V and 3 mA/cm² at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si

Keywords

III-V semiconductors; avalanche photodiodes; current density; gallium arsenide; indium compounds; optical receivers; photodetectors; silicon; I-V curve; InGaAs-Si; MOCVD; covalent bonding; dark current reduction; high bit rate receivers; high sensitivity; ionization coefficients; large gain-bandwidth product; mesa type fused APD; separated absorption and multiplication structure; top-illuminated APD; Avalanche photodiodes; Bonding; Dark current; Electrodes; Etching; Indium gallium arsenide; Indium phosphide; Polyimides; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969043

Filename

969043