Comparison of numerical aperture increasing lens and standard subsurface microscopy

Author

Ippolito, Stephen Bradley ; Goldberg, Bennett B. ; Ünlü, M. Selim

Author_Institution

Depts. of Phys., Boston Univ., MA, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

774

Abstract

Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 μm. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu μAMOS-200, IC Failure Analysis System. The NAIL improves the microscope´s lateral spatial resolution from ~1.7 μm to ~0.3 μm. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces

Keywords

failure analysis; image resolution; inspection; integrated circuit testing; lenses; optical microscopy; optical transfer function; failure analysis system; image contrast; integrated circuit; integrated solid immersion lens; lateral line scan; lateral spatial resolution; longitudinal dielectric interfaces; modulation transfer function; normalized defocus values; numerical aperture increasing lens; periodic structure; piano-convex lens; standard subsurface microscopy; subsurface inspection; vertical sectioning; Apertures; Failure analysis; Frequency; Lenses; Nails; Periodic structures; Physics; Spatial resolution; Transfer functions; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969044

Filename

969044