DocumentCode :
1966913
Title :
Coupling of silicon nanophotonic circuits to optical fibers
Author :
Wosinski, Lech ; Wang, Zhechao ; Tang, Yongbo
Author_Institution :
Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Kista, Sweden
fYear :
2010
fDate :
8-12 Dec. 2010
Firstpage :
421
Lastpage :
422
Abstract :
Silicon-based nanophotonic waveguides and components fabricated in silicon-on-insulator technology build a platform for high density photonic integrated circuits, where active III-V devices can be incorporated using evanescent field coupling. These circuits can be fabricated with standard CMOS technology processing, allowing for low cost mass production in applications such as optical networks, computer interconnects and sensing. Connecting of these integrated structures to the real world of optical fibers appears is an important problem to be solved. In this paper we discuss some solutions and present some of fabricated devices including a grating coupler-polarization splitter with over 50% efficiency for both polarizations and a nonuniform grating coupler with 68% efficiency for single polarization. To the best of our knowledge, they are the highest coupling efficiencies obtained by regular SOI grating couplers for both, single polarization and polarization splitting.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; integrated optics; integrated optoelectronics; nanophotonics; optical beam splitters; optical interconnections; optical waveguides; silicon; silicon-on-insulator; CMOS technology; III-V devices; SOI grating couplers; Si; computer interconnects; evanescent field coupling; grating coupler-polarization splitter; nanophotonic waveguides; optical fiber coupling; optical networks; photonic integrated circuits; silicon nanophotonic circuits; silicon on insulator; Couplers; Couplings; Gratings; Optical fiber sensors; Optical fibers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
Type :
conf
DOI :
10.1109/ACP.2010.5682491
Filename :
5682491
Link To Document :
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