Title :
Non Linear Analysis of Three Terminal Avalanche Devices
Author :
Lefebvre, M. ; Salmer, G. ; Crosnier, Y. ; Constant, E.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs (E.R.A. au C.N.R.S. N° 454), UNIVERSITE DE LILLE I BP 36 59650 VILLENEUVE D´´ASCQ FRANCE
Abstract :
The Influence of a thermionic type injected current on the performances of GaAs IMPATT diodes under large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the r. f. level, injection phase, d.c. current multiplication factor and base collector doping profile. Interesting results can be expected in X band with a transistor-like device in which the transistor effect, avalanche effect and transit time effect are use together.
Keywords :
Bipolar transistors; Breakdown voltage; Doping profiles; Gallium arsenide; Microwave amplifiers; Microwave frequencies; Microwave transistors; Neural networks; Pulse amplifiers; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 1976. 6th European
Conference_Location :
Rome, Italy
DOI :
10.1109/EUMA.1976.332235
