Ultrafast intersubband transitions in heavily doped InGaAs/AlAsSb coupled double quantum well structures for all-optical switching

Author

Yoshida, H. ; Akiyama, T. ; Mozume, T. ; Georgiev, N. ; Gopal, A.V. ; Wada, O. ; Ishikawa, H.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan

Volume

2

fYear

2001

fDate

2001

Firstpage

792

Abstract

We analyze the carrier density dependence of intersubband transition (ISB-T) responses at 1.55 gm in InGaAs/AlAsSb coupled double quantum well (C-DQW) structures and show the capability of all-optical switching faster than 700 fs due to ultrafast carrier redistribution in heavily doped C-DQW. We also show an experimental demonstration of ultrafast response of ISB absorption in this structure

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high-speed optical techniques; indium compounds; optical switches; semiconductor quantum wells; time resolved spectra; transient response; 1.55 micron; InGaAs-AlAsSb; all-optical switching; carrier density dependence; coupled double quantum well; four-level rate equations; heavily doped quantum well structures; large transition dipole moment; pulse energy dependence; subpicosecond range; switching dynamics; transient responses; ultrafast carrier redistribution; ultrafast intersubband transitions; ultrafast relaxation; widely tunable transition wavelength; Absorption; Communication switching; Electrons; Indium gallium arsenide; Indium phosphide; Optical scattering; Optical switches; Particle scattering; Telecommunication switching; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969053

Filename

969053