DocumentCode :
1967055
Title :
Minimum Resistance Microwave Diodes
Author :
Barrera, J.S. ; Curby, R.C. ; DeFevere, D.C. ; Kwan, F.S. ; Nevin, L.J. ; Solomon, R.
Author_Institution :
Hewlett-Packard Company, MSD, Palo Alto, CA 94304 USA
fYear :
1976
fDate :
14-17 Sept. 1976
Firstpage :
14
Lastpage :
18
Abstract :
Silicon PIN switching diodes and GaAs varactor tuning diodes have demonstrated 100% performance improvements in quality factor Q by using straightforward optimization techniques, device processing innovations and improvements in materials. Analogous design techniques have been applied to both devices, including careful modeling to identify series resistance contributions, and directed process development to reduce these contributions. In both cases, substrate resistance was reduced to a minimum with processes that replaced semiconductor substrate with metal. Total resistance was minimized by analytical calculation to define optimum device geometries.
Keywords :
Gallium arsenide; Geometry; Microwave devices; Q factor; Semiconductor diodes; Semiconductor materials; Silicon; Substrates; Technological innovation; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1976. 6th European
Conference_Location :
Rome, Italy
Type :
conf
DOI :
10.1109/EUMA.1976.332237
Filename :
4130903
Link To Document :
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