Title :
Chirp characteristics of silicon Mach-Zehnder modulators
Author :
Wei, Yuxin ; Zhao, Yong ; Li, Guoyi ; Yang, Jianyi ; Wang, Minghua ; Jiang, Xiaoqing
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Chirp characteristics of silicon based Mach-Zehnder-interferometer (MZI) modulators with forward biased P-I-N diode and reverse biased PN diode are analyzed, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude and frequency of applied sinusoidal modulating signals.
Keywords :
Mach-Zehnder interferometers; chirp modulation; elemental semiconductors; p-i-n diodes; silicon; P-I-N diode; Si; carrier absorption effect; chirp characteristics; chirp parameter; reverse biased PN diode; silicon Mach-Zehnder modulators; silicon Mach-Zehnder-interferometer; sinusoidal modulating signals; Chirp; Frequency modulation; Optical modulation; P-i-n diodes; Phase shifters; Silicon;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682510
