Title :
A 128 kb FeRAM macro for a contact/contactless smart card microcontroller
Author :
Yamada, J. ; Miwa, T. ; Koike, H. ; Toyoshima, H. ; Amanuma, K. ; Kobayashi, S. ; Tatsumi, T. ; Maejima, Y. ; Hada, H. ; Mori, H. ; Takahashi, S. ; Takeuchi, H. ; Kunio, T.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
For contact/contactless smart-card applications, a ferroelectric RAM (FeRAM) macro must operate with supply voltages ranging from 2.7 V to 5.5 V, as standardized by ISO, and have endurance of more than 10/sup 8/ write/read cycles and memory size flexible from 32 kb to 128 kb. In addition, for contactless smart card applications, low current consumption is essential. This macro meets these requirements using: (1) 3-metal process capacitor-on-metal/via-stacked-plug (CMVP) memory cell; (2) voltage regulation architecture; (3) main/sub bit line and word line structure; and (4) dynamic-type offset sense amplifier.
Keywords :
ferroelectric storage; integrated memory circuits; microcontrollers; random-access storage; smart cards; voltage control; 2.7 to 5.5 V; 32 to 128 kbit; CMVP memory cell; FeRAM macro; capacitor-on-metal; contact smart card microcontroller; contactless smart card microcontroller; dynamic-type offset sense amplifier; ferroelectric RAM; low current consumption; three-metal process; via-stacked-plug; voltage regulation architecture; Capacitors; Ferroelectric films; Ferroelectric materials; Microcontrollers; Nonvolatile memory; Random access memory; Regulators; Smart cards; Voltage; Wiring;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839780
