Title :
InP lateral overgrowth technology for silicon photonics
Author :
Wang, Zhechao ; Junesand, Carl ; Metaferia, Wondwosen ; Hu, Chen ; Lourdudoss, Sebastian ; Wosinski, Lech
Author_Institution :
Sch. of ICT, R. Inst. of Technol. (Sweden), Kista, Sweden
Abstract :
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By optimizing the process, a dislocation free InP layer has been successfully grown on top of silicon wafer, which can be used as the base for active devices.
Keywords :
III-V semiconductors; dislocations; elemental semiconductors; epitaxial growth; indium compounds; integrated optics; optical materials; semiconductor growth; silicon; InP-Si; Si; active silicon photonic components; epitaxial lateral overgrowth; hybrid integration platform; layer dislocation; silicon wafer; Bonding; Epitaxial growth; Indium phosphide; Optical devices; Photonics; Silicon;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682513
