Title :
A 2nd generation 440 ps SOI 64 b adder
Author :
Stasiak, D. ; Tran, J. ; Mounes-Toussl, F. ; Storino, S.
Author_Institution :
IBM Corp., Rochester, MN, USA
Abstract :
Silicon-on-insulator (SOI) technology allows higher performance than bulk technology. However, the floating body effect in SOI devices poses challenges via history effects, bipolar currents, and lower noise margins on dynamic circuits. This 64 b adder is used to compute the effective address in a PowerPC/sup TM/ processor. Particular emphasis is on design issues, advantages resulting from unique SOI device structures, and the techniques for controlling floating body effect in partially-depleted devices. Adder performance comparison is shown for bulk CMOS, first-generation SOI CMOS, and second generation SOI CMOS.
Keywords :
CMOS logic circuits; adders; high-speed integrated circuits; silicon-on-insulator; 440 ps; 64 bit; PowerPC processor; adder; design; floating body effect; high-speed microprocessor; partially depleted device; second generation SOI CMOS technology; Adders; Cache memory; Circuit noise; History; Logic; Microprocessors; Pulse inverters; Rails; Registers; Silicon on insulator technology;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839784