DocumentCode :
1967470
Title :
Nearly lasing actions from metal-oxide-semiconductor structure on Si
Author :
Lin, Ching-Fuh ; Chung, Peng-Fei ; Chen, Miin-Jang ; Su, Wei-Fang
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
2
fYear :
2001
fDate :
2001
Firstpage :
829
Abstract :
We discover that SiO2 nanoparticles could significantly improve electroluminescence (EL) at Si bandgap energy from metal-oxide-silicon (MOS) structures for orders of magnitudes. Furthermore, the nanoparticle-modified MOS exhibits nearly lasing actions like the threshold behavior and resonance modes
Keywords :
MIS structures; electroluminescence; integrated optics; nanostructured materials; silicon compounds; MOS structures; Si; Si bandgap energy; SiO2; SiO2 nanoparticles; electroluminescence; metal-oxide-semiconductor structure; metal-oxide-silicon structures; nanoparticle-modified MOS; resonance modes; threshold behavior; Carrier confinement; Charge carrier processes; Contacts; Nanoparticles; Nanostructures; Paints; Photonic band gap; Radiative recombination; Resonance; Silver;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-7105-4
Type :
conf
DOI :
10.1109/LEOS.2001.969072
Filename :
969072
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1967470
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