Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions

Author

Zhou, W.D. ; Pradhan, S. ; Bhattacharya, P. ; Liu, W.K. ; Lubyshev, D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

831

Abstract

Summary form only given. We report here GaAs-based low, power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) ensures the simple processing, compact size and excellent performance of the arrays

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; light emitting diodes; optical arrays; optical receivers; optical resonators; phototransistors; tunnelling; GaAs; GaAs-based low power phototransceivers; compact size; heterojunction phototransistors; integration scheme; phototransceiver arrays; phototransistors; resonant cavity light emitting diodes; tunnel junction; tunnel junctions; vertically integrated; vertically integrated resonant cavity LEDs; Light emitting diodes; Optical arrays; Optical crosstalk; Optical devices; Optical imaging; Optical interconnections; Optical sensors; Phototransistors; Power dissipation; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969073

Filename

969073